GaN growth on (30&3macr;8) 4H-SiC substrate for reduction of internal polarization

✍ Scribed by S. Kamiyama; A. Honshio; T. Kitano; M. Iwaya; H. Amano; I. Akasaki; H. Kinoshita; H. Shiomi

• Book ID: 104557466
• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 237 KB
• Volume: 2
• Category: Article
• ISSN: 1862-6351
• DOI: 10.1002/pssc.200461390