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Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect

✍ Scribed by V. C. Su; I. S. Lin; J. B. Kuo; G. S. Lin; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma

No coin nor oath required. For personal study only.

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