Function of the parasitic bipolar transistor in the 40 nm PD SOI NMOS device considering the floating body effect

✍ Scribed by C.H. Chena; J.B. Kuo; D. Chen; C.S. Yeh

• Book ID: 113916104
• Publisher: Elsevier Science
• Year: 2012
• Tongue: English
• Weight: 934 KB
• Volume: 70
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/j.sse.2011.11.013