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Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect

✍ Scribed by H.J. Hung; J.B. Kuo; D. Chen; C.S. Yeh

No coin nor oath required. For personal study only.

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Gate tunneling leakage current behavior of 40&#xa0;nm PD SOI NMOS device considering the floating body effect