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Bonding rearrangement in amorphous silicon nitrides deposited by hot-wire chemical vapor deposition upon thermal annealing

✍ Scribed by Y. Mai; V. Verlaan; C.H.M. van der Werf; Z.S. Houweling; R. Bakker; J.K. Rath; R.E.I. Schropp

No coin nor oath required. For personal study only.

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