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Bonding at silicon/insulator interfaces

โœ Scribed by F.J. Himpsel; T.F. Heinz; A.B. McLean; E. Palange


Book ID
103615149
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
540 KB
Volume
41-42
Category
Article
ISSN
0169-4332

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๐Ÿ“œ SIMILAR VOLUMES


Conductance oscillations near bonded int
โœ O.V. Naumova; I.V. Antonova; V.P. Popov; N.V. Sapognikova; Yu.V. Nastaushev; E.V ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 127 KB

The conductance oscillations have been observed at room temperature in the ultra thin silicon layers of the silicon-on-insulator structures prepared with the bonding and hydrogen slicing technology. An origin of the oscillations is attributed to a formation of tunnel barriers for one type of carrier