Bistable behavior of silicon wafer in rapid thermal processing setup
β Scribed by V.I. Rudakov; V.V. Ovcharov; A.L. Kurenya; V.P. Prigara
- Book ID
- 113797930
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 606 KB
- Volume
- 93
- Category
- Article
- ISSN
- 0167-9317
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The effect of rapid thermal process (RTP) on the oxygen precipitation and on the denuded zone (DZ) formation in nitrogen-doped Czochralski (NCZ) silicon wafers has been investigated. The DZ can be formed at the surface of NCZ wafers subjected to RTP annealing. However, the oxygen precipitation and b
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