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Bipolar transistor with tunnel oxide emitter structure (MISET)

✍ Scribed by Nam, N. S. ;Zólomy, I. ;Schiller, V.


Book ID
105381945
Publisher
John Wiley and Sons
Year
1990
Tongue
English
Weight
450 KB
Volume
118
Category
Article
ISSN
0031-8965

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A superlattice-emitter resonant-tunneling bipolar transistor (SE-RTBT) has been successfully fabricated using GaAs based materials and demonstrated in this paper. In an SE-RTBT, the \(\mathrm{i}-\mathrm{Al}_{0.5} \mathrm{Ga}_{0.5} \mathrm{As} / \mathrm{n}^{+}-\mathrm{GaAs}\) superlattice is used as