Electron transparent Si, Ge and GaP samples were implanted with 50 keV Xe + ions to a dose around 10 11 ions/cm 2 . At this implantation condition, each heavy ion created a small, spatially isolated amorphous zone. Following the ion implantation, the samples were irradiated with electrons having ene
β¦ LIBER β¦
Bimodal distribution of damage morphology generated by ion implantation
β Scribed by K.R.C. Mok; M. Jaraiz; I. Martin-Bragado; J.E. Rubio; P. Castrillo; R. Pinacho; M.P. Srinivasan; F. Benistant
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 205 KB
- Volume
- 124-125
- Category
- Article
- ISSN
- 0921-5107
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