Big channeling effects at low-energy ion implantation in silicon
β Scribed by Bollmann, J. ;Klose, H. ;Mertens, A.
- Publisher
- John Wiley and Sons
- Year
- 1986
- Tongue
- English
- Weight
- 199 KB
- Volume
- 97
- Category
- Article
- ISSN
- 0031-8965
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π SIMILAR VOLUMES
Defects evolution in silicon during annealing after low energy Si + implantation is simulated by atomistic method in this paper. Distribution of implanted dopants and defects is simulated by molecular dynamic method. The experimental results published by Stolk et al. (J Appl Phys 81 (9) (1991) 6031)
Thin thermally grown silicon oxides are implanted with a high dose of silicon using very low energy ion implantation. After high temperature annealing, the oxides are observed by Transmission Electron Microscopy which reveals the existence of silicon nano-crystals. The electrical properties of metal