## Abstract The inβplane lattice parameters of InN, GaN and Al~2~O~3~ in a InN/GaN/Al~2~O~3~(0001) heterostructure have been measured as a function of temperature in the range of 25β350 Β°C, using high resolution Xβray diffraction. The results reveal that both the GaN and InN crystals follow the inβ
β¦ LIBER β¦
Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy
β Scribed by Dimakis, E.; Iliopoulos, E.; Tsagaraki, K.; Adikimenakis, A.; Georgakilas, A.
- Book ID
- 121812181
- Publisher
- American Institute of Physics
- Year
- 2006
- Tongue
- English
- Weight
- 367 KB
- Volume
- 88
- Category
- Article
- ISSN
- 0003-6951
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