✦ LIBER ✦

Beryllium and sulfur ion-implanted profiles in gaas

✍ Scribed by James Comas; Larry Plew

Book ID: 112812557
Publisher: Springer US
Year: 1976
Tongue: English
Weight: 489 KB
Volume: 5
Category: Article
ISSN: 0361-5235
DOI: 10.1007/bf02652904

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Beryllium Ion Implantation into GaAs and

Beryllium Ion Implantation into GaAs and Pseudomorphic AIGaAs/lnGaAs/GaAs Heterostructure

✍ J. F. Thiery; H. Fawaz; J. C. Pesant; N. T. Linh; G. Salmer 📂 Article 📅 1997 🏛 Springer US 🌐 English ⚖ 455 KB

GaAs planar gunn devices with sulfur-ion

GaAs planar gunn devices with sulfur-ion implanted n layers

✍ Takashi Mizutani; Takashi Honda; Hajime Yamazaki; Masatomo Fugjimoto 📂 Article 📅 1977 🏛 Elsevier Science 🌐 English ⚖ 350 KB

A comparison between atomic concentratio

A comparison between atomic concentration profiles and defect density profiles in GaAs annealed after implantation with beryllium

✍ K. S. Lee; J. M. Ess; M. A. Littlejohn; R. B. Benson; J. Comas 📂 Article 📅 1980 🏛 Springer US 🌐 English ⚖ 676 KB

Lattice defects in ion implanted GaAs

✍ Pashov, N. ;Vitali, G. ;Kalitzova, M. ;Rossi, M. 📂 Article 📅 1995 🏛 John Wiley and Sons 🌐 English ⚖ 519 KB

Damage Profiles in Ion Implanted Silicon

✍ Tkachev, V. D. ;Hölzer, G. ;Chelyadinskii, A. R. 📂 Article 📅 1984 🏛 John Wiley and Sons 🌐 English ⚖ 185 KB

Deuterium diffusion, trapping and releas

Deuterium diffusion, trapping and release in ion-implanted beryllium

✍ R.G. Macaulay-Newcombe; D.A. Thompson; W.W. Smeltzer 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 448 KB

High purity beryllium samples were loaded with deuterium by ion-implantation at 25°C or by thermal absorption in D e gas at 300-500°C. The samples were then thermally ramped up to 800°C at rates of 2-3°C/min, and the released deuterium measured as a function of temperature using a mass spectrometer.