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A comparison between atomic concentration profiles and defect density profiles in GaAs annealed after implantation with beryllium

✍ Scribed by K. S. Lee; J. M. Ess; M. A. Littlejohn; R. B. Benson; J. Comas


Book ID
112814850
Publisher
Springer US
Year
1980
Tongue
English
Weight
676 KB
Volume
9
Category
Article
ISSN
0361-5235

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