The Texture of GaSb Ingots Grown by the Bridgman Method Crystallographic features of GaSb grown by the Bridgman procedure were investigated by scanning electron microscopy. Chemical etching and the electron channelling method were used to determine the position and crystallographic orientation of cr
β¦ LIBER β¦
Behaviour of Mn in GaSb grown by the Bridgman method
β Scribed by T. Adhikari; S. Basu
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 465 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0921-5107
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