Behaviors of impurities in Cd0.85Zn0.15Te crystals grown by vertical Bridgman method
β Scribed by Guoqiang Li; Wanqi Jie; Ge Yang; Tao Wang
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 136 KB
- Volume
- 113
- Category
- Article
- ISSN
- 0921-5107
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π SIMILAR VOLUMES
Sr 3 Ga 2 Ge 4 O 14 (SGG) has been grown by the vertical Bridgman method. The dielectric constants Ξ΅ T 11 and Ξ΅ T 33 at room temperature is 13.61 and 18.18, respectively. The dielectric measurements show that SGG crystals display relative high temperature stability and high frequency stability. Ther
Cd 1-x Mn x Te (x=0.2, CdMnTe) crystal was grown by the vertical Bridgman method, which exhibits a pure zincblende structure in the whole ingot. The major defect, twins, which is fatal to CdMnTe crystal, was analyzed with scanning electron microscopy (SEM), X-ray energy disperse spectroscopy (XEDS)