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B–C–N hybrid synthesis by high-temperature ion implantation

✍ Scribed by Md. Nizam Uddin; Iwao Shimoyama; Yuji Baba; Tetsuhiro Sekiguchi; Krishna G. Nath; Masamitsu Nagano

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
182 KB
Volume
241
Category
Article
ISSN
0169-4332

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Incorporation of active Fe impurities in
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Single GaInP layers, grown by MOVPE lattice matched to GaAs, were implanted with Fe at T = 200 °C and annealed at 450 or 600 °C. The role of implantation temperature and fluence in determining the crystal damage, and the damage recovery by annealing are investigated by RBS-channeling measurements. T