๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Synthesis of ZnO nanocrystals in sapphire by ion implantation and vacuum annealing

โœ Scribed by C. Marques; N. Franco; L.C. Alves; R.C. da Silva; E. Alves; G. Safran; C.J. McHargue


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
476 KB
Volume
257
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Growth of ZnO nanocrystals in silica by
โœ V.V. Siva Kumar; F. Singh; Amit Kumar; D.K. Avasthi ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 164 KB

Thin films with ZnO nanocrystals in silica were synthesized by rf reactive magnetron co-sputter deposition and post-annealing. The films were deposited from a ZnO/Si composite target in an rf oxygen plasma. The deposited films were annealed in air/vacuum at high temperatures to grow ZnO nanocrystals

Photoluminescence properties of ZnO thin
โœ Tu Anh Trinh; In Seok Hong; Hwa Ryun Lee; Yong Sub Cho ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 388 KB

ZnO thin films on sapphire substrate were fabricated by ion implantation combined with thermal oxidation. A sapphire substrate was implanted with 50 keV zinc ions at 350 ยฐC with a fluence of 1.5 ร‚ 10 17 ions cm ร€2 , then annealed in a tube furnace in oxygen ambient in 2 h at 650 ยฐC. Photoluminescenc

Reduction of Defects in GaN on Reactive
โœ D. Byun; J. Jhin; S. Cho; J. Kim; S.J. Lee; C.H. Hong; G. Kim; W.-K. Choi ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 80 KB

Previous studies showed that reactive ion beam (RIB) pretreatment of sapphire prior to GaN deposition results in the reduction of dislocation density in the GaN film. It was also found that an amorphous phase remained at the interface region after the GaN deposition at high temperature. Annealing wa