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Basic laws and causes governing the formation of transitional layers in the autoepitaxy of gallium arsenide

✍ Scribed by L. G. Lavrent'eva; Yu. G. Kataev; M. D. Vilisova; V. A. Moskovkin

Book ID: 112418258
Publisher: Springer
Year: 1971
Tongue: English
Weight: 476 KB
Volume: 14
Category: Article
ISSN: 1573-9228
DOI: 10.1007/bf00823842

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