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Effect of the means of substrate processing on the growth kinetics of autoepitaxial layers of gallium arsenide and their properties

✍ Scribed by L. G. Lavrent'eva; L. P. Porokhovnichenko; I. V. Ivonin; L. M. Krasil'nikova; N. N. Ivanova

No coin nor oath required. For personal study only.

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Investigation of transitional layers in

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