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Barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) prepared by molecular beam epitaxy

✍ Scribed by K.F. Yarn; Y.H. Wang; M.S. Chen

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
316 KB
Volume
35
Category
Article
ISSN
0921-5107

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Long-wavelength strained-layer InGaAs/Ga
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✍ T. Piwoński; P. Sajewicz; J. M. Kubica; M. Zbroszczyk; K. Regiński; B. Mroziewic 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 117 KB

## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Å thick InGaAs quantum well with an indium content of 25%, which is close to cri