✦ LIBER ✦

Band structure and confined energy levels of the Si[sub 3]N[sub 4]/Si/GaAs system

✍ Scribed by Chen, Z.; Mohammad, S. N.; Park, D.-G.; Diatezua, D. M.; MorkocÌ§, H.; Chang, Y. C.

Book ID: 120085928
Publisher: American Institute of Physics
Year: 1997
Tongue: English
Weight: 390 KB
Volume: 82
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.365808

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Plasma Etching of Si, SiO[sub 2], Si[sub

Plasma Etching of Si, SiO[sub 2], Si[sub 3]N[sub 4], and Resist with Fluorine, Chlorine, and Bromine Compounds

✍ Sparks, Douglas R. 📂 Article 📅 1992 🏛 The Electrochemical Society 🌐 English ⚖ 654 KB

Electronic structures of Î²-Si[sub 3]N[s

Electronic structures of Î²-Si[sub 3]N[sub 4](0001)/Si(111) interfaces: Perfect bonding and dangling bond effects

✍ Yang, M.; Wu, R. Q.; Deng, W. S.; Shen, L.; Sha, Z. D.; Cai, Y. Q.; Feng, Y. P.; 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 555 KB

Energy band structure and electrical pro

Energy band structure and electrical properties of (La[sub 2]O[sub 3])[sub 1âx](SiO[sub 2])[sub x](0â¤xâ¤1)ân-GaAs(001) system

✍ Yang, Jun-Kyu; Park, Hyung-Ho 📂 Article 📅 2005 🏛 American Institute of Physics 🌐 English ⚖ 343 KB

Study of Reactive Ion Etching of the Si[

Study of Reactive Ion Etching of the Si[sub 3]N[sub 4]∕GaAs Interface in CF[sub 4] Plasmas by X-Ray Photoelectron Spectroscopy and X-Ray Photoelectron Diffraction

✍ Alnot, P. 📂 Article 📅 1989 🏛 The Electrochemical Society 🌐 English ⚖ 759 KB

Structure and bonding in a cubic phase o

Structure and bonding in a cubic phase of SiAlON derived from the cubic spinel phase of Si[sub 3]N[sub 4]

✍ Ouyang, Lizhi; Ching, W. Y. 📂 Article 📅 2002 🏛 American Institute of Physics 🌐 English ⚖ 289 KB

Highly Selective Etching of Si[sub 3]N[s

Highly Selective Etching of Si[sub 3]N[sub 4] to SiO[sub 2] Employing Fluorine and Chlorine Atoms Generated by Microwave Discharge

✍ Suto, S. 📂 Article 📅 1989 🏛 The Electrochemical Society 🌐 English ⚖ 395 KB