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Highly Selective Etching of Si[sub 3]N[sub 4] to SiO[sub 2] Employing Fluorine and Chlorine Atoms Generated by Microwave Discharge

โœ Scribed by Suto, S.


Book ID
118183374
Publisher
The Electrochemical Society
Year
1989
Tongue
English
Weight
395 KB
Volume
136
Category
Article
ISSN
0013-4651

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