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Ballistic electron microscopy study of ultrathin oxidized aluminum barriers for magnetic tunnel junctions

✍ Scribed by Rippard, W. H.; Perrella, A. C.; Buhrman, R. A.


Book ID
120072470
Publisher
American Institute of Physics
Year
2001
Tongue
English
Weight
531 KB
Volume
78
Category
Article
ISSN
0003-6951

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Low-resistance magnetic tunneling junctions consisting of Ta/NiFe/Cu/NiFe/IrMn/CoFe/Al (6.6 and 7.7 A)-oxide/CoFe/NiFe/Ta were fabricated with the plasma-oxidized insulation layer. Electrical properties and microstructure of the junctions are characterized before and after annealing the junction at