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Magnetization reversal of patterned spin–tunnel junction material: A transmission electron microscopy study

✍ Scribed by Ardhuin, H.; Chapman, J. N.; Aitchison, P. R.; Gillies, M. F.; Kirk, K. J.; Wilkinson, C. D. W.


Book ID
120024892
Publisher
American Institute of Physics
Year
2000
Tongue
English
Weight
801 KB
Volume
88
Category
Article
ISSN
0021-8979

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Low-resistance magnetic tunneling junctions consisting of Ta/NiFe/Cu/NiFe/IrMn/CoFe/Al (6.6 and 7.7 A)-oxide/CoFe/NiFe/Ta were fabricated with the plasma-oxidized insulation layer. Electrical properties and microstructure of the junctions are characterized before and after annealing the junction at