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Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study

✍ Scribed by Kim, Y. H.; Ruh, H.; Noh, Y. K.; Kim, M. D.; Oh, J. E.

Book ID: 126013042
Publisher: American Institute of Physics
Year: 2010
Tongue: English
Weight: 623 KB
Volume: 107
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.3327004

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