In this work we introduce a molecular beam epitaxy (MBE)-grown InAs layer as base in ballistic electron emission spectroscopy/microscopy (BEES/BEEM). Compared to the commonly used thin metal รlm as base, the transmission coefficient and the attenuation length can be enhanced by more than one order o
โฆ LIBER โฆ
Ballistic electron emission microscopy of metal/semiconductor interfaces and heterojunctions
โ Scribed by R.H. Williams
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 493 KB
- Volume
- 70-71
- Category
- Article
- ISSN
- 0169-4332
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