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Background formation in SIMS analysis of hydrogen, carbon, nitrogen and oxygen in silicon

✍ Scribed by K. Wittmaack

Publisher
Elsevier Science
Year
1983
Weight
433 KB
Volume
218
Category
Article
ISSN
0167-5087

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✍ Xiaodong Pi; Deren Yang; Xiangyang Ma; Qiong Shui; Duanlin Que πŸ“‚ Article πŸ“… 2000 πŸ› John Wiley and Sons 🌐 English βš– 82 KB πŸ‘ 1 views

The electrical activity of nitrogenΒ±oxygen (NΒ±O) complexes in nitrogen-doped Czochralski (NCZ) silicon treated by hydrogen plasma was investigated. It was observed that in the hydrogenated NCZ samples the absorption line intensity of m-NΒ±O (NΒ±O complexes inducing middle infrared absorption lines) de