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Automatic measurement of minority carrier lifetimes in silicon for nonuniform doped samples using the Zerbst method

✍ Scribed by McGillivray, Ian G.; Robertson, John M.; Walton, Anthony J.


Book ID
114454261
Publisher
The Institution of Electrical Engineers
Year
1987
Weight
736 KB
Volume
134
Category
Article
ISSN
0143-7100

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