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Method for the Microwave Measurement of Carrier Lifetime in Lightly Doped Silicon Ingots

โœ Scribed by P. A. Borodovskii; A. F. Buldygin; A. S. Tokarev; E. V. Chernyavskii

Publisher
Springer
Year
2005
Tongue
English
Weight
95 KB
Volume
34
Category
Article
ISSN
1063-7397

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โœ Can Cui; Deren Yang; Xuegong Yu; Xiangyang Ma; Liben Li; Duanlin Que ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 121 KB

The effect of nitrogen doping on the minority carrier lifetime in Czochralski silicon (CZ-Si) passivated in dry O at different temperatures was studied. It was found that the most effective passivation temperature of 2 nitrogen-doped CZ silicon (NCZ-Si) wafers was 1000 8C, the same as that of CZ-Si