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The effect of thermal treatment on the charge-carrier lifetime in nickel-doped silicon

โœ Scribed by M. Karimov; A. O. Kurbanov; S. Zainabidinov; A. K. Karakhodzhaev

Publisher
Springer
Year
2006
Tongue
English
Weight
265 KB
Volume
49
Category
Article
ISSN
1573-9228

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โœ Can Cui; Deren Yang; Xuegong Yu; Xiangyang Ma; Liben Li; Duanlin Que ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 121 KB

The effect of nitrogen doping on the minority carrier lifetime in Czochralski silicon (CZ-Si) passivated in dry O at different temperatures was studied. It was found that the most effective passivation temperature of 2 nitrogen-doped CZ silicon (NCZ-Si) wafers was 1000 8C, the same as that of CZ-Si