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Autodoping of epitaxial silicon layers (II) diffusion-induced autodoping

✍ Scribed by Dr. rer. nat H. Kühne; Dr. rer. nat P. Gaworzewski; W. Malze

Publisher
John Wiley and Sons
Year
1985
Tongue
English
Weight
455 KB
Volume
20
Category
Article
ISSN
0232-1300

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📜 SIMILAR VOLUMES

Autodoping of Epitaxial Silicon Layers (
Autodoping of Epitaxial Silicon Layers (III). Theoretical Treatment of Lateral Autodoping
✍ Dr. H. Kühne 📂 Article 📅 1986 🏛 John Wiley and Sons 🌐 English ⚖ 451 KB

## Autodoping of Epitaxial Silicon Layers (111) Theoretical Treatment of Lateral Autodoping Solving dopants from the silicon surface into the volume during epitaxial layer growth is commonly described as a solution equilibrium, which forms an essential part of modelling intentional silicon doping.