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Autodoping of antimony and arsenic in silicon epitaxial layers

✍ Scribed by P. Katona

Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
300 KB
Volume
100
Category
Article
ISSN
0040-6090

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πŸ“œ SIMILAR VOLUMES

Autodoping of Epitaxial Silicon Layers (
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## Autodoping of Epitaxial Silicon Layers (111) Theoretical Treatment of Lateral Autodoping Solving dopants from the silicon surface into the volume during epitaxial layer growth is commonly described as a solution equilibrium, which forms an essential part of modelling intentional silicon doping.

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## Doping of Silicon Epitaxial Layers with Arsenic at very High Concentrations Silicon epitaxial layers grown from reduction of SiCl, in H, have been highly doped with arsenic. As an upper limit of doping for layers without structural defects typical to high doping a value of about 2 . 1019 (3111-