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Auger electron spectroscopy study of GaAs layer growth on InP substrate

✍ Scribed by Y. Matsui; H. Hayashi; K. Yoshida

Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
502 KB
Volume
81
Category
Article
ISSN
0022-0248

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Growth and Electron Microscopical Investigations of (CaBa)Fs Epitaxial Layers on GaAs and InP Substrates (CaBa)Fa layers have been grown on (100)-oriented GaAs and I n P substrates by flash evaporation technique. They were investigated by means of electron microscopical methods (RHEED, TED, TEM). Ep