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Atomistic simulations of the implantation of low-energy boron and nitrogen ions into graphene

✍ Scribed by Åhlgren, E. H.; Kotakoski, J.; Krasheninnikov, A. V.

Book ID
120234113
Publisher
The American Physical Society
Year
2011
Tongue
English
Weight
557 KB
Volume
83
Category
Article
ISSN
1098-0121

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Defects evolution in silicon during annealing after low energy Si + implantation is simulated by atomistic method in this paper. Distribution of implanted dopants and defects is simulated by molecular dynamic method. The experimental results published by Stolk et al. (J Appl Phys 81 (9) (1991) 6031)