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Comparison of BC and MD simulations of low-energy ion implantation

✍ Scribed by M. Posselt; K.-H. Heinig


Book ID
113287666
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
439 KB
Volume
102
Category
Article
ISSN
0168-583X

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MD simulation of ion implantation damage
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Classical molecular dynamics computer simulations using a modified Tersoff potential are used to investigate the generation of point defects in Al x Ga 1Γ€x As crystals caused by Al, Ga and As recoils of energies in the range of 7-50 eV. The crystals are kept at room temperature and the composition x