A compact quantum statistical model for
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Varpula, A. ;Lebedeva, N. ;Kuivalainen, P.
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Article
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2011
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John Wiley and Sons
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English
⚖ 352 KB
## Abstract We develop an analytical quantum statistical model for nanoscale metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). The model describes transport both in the scattering‐limited and ballistic regimes. The expression for the channel current is derived with the Keldysh nonequili