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“Atomistic”, Quantum and Ballistic Effects in Nanoscale MOSFETs

✍ Scribed by G. Fiori; G. Iannaccone


Book ID
111588888
Publisher
Springer
Year
2003
Tongue
English
Weight
78 KB
Volume
2
Category
Article
ISSN
1569-8025

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A compact quantum statistical model for
✍ Varpula, A. ;Lebedeva, N. ;Kuivalainen, P. 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 352 KB

## Abstract We develop an analytical quantum statistical model for nanoscale metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). The model describes transport both in the scattering‐limited and ballistic regimes. The expression for the channel current is derived with the Keldysh nonequili