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3D ‘atomistic’ simulations of dopant induced variability in nanoscale implant free In0.75Ga0.25As MOSFETs

✍ Scribed by N. Seoane; M. Aldegunde; A. Garcı´a-Loureiro; R. Valin; K. Kalna


Book ID
113916118
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
714 KB
Volume
69
Category
Article
ISSN
0038-1101

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