𝔖 Bobbio Scriptorium

✦ LIBER ✦

Simulating quantum transport in nanoscale mosfets: ballistic hole transport, subband engineering and boundary conditions

✍ Scribed by Venugopal, R.; Zhibin Ren, ; Lundstrom, M.S.

Book ID: 120523372
Publisher: IEEE
Year: 2003
Tongue: English
Weight: 723 KB
Volume: 2
Category: Article
ISSN: 1536-125X
DOI: 10.1109/TNANO.2003.817229

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE 2012 International Conference on E

[IEEE 2012 International Conference on Engineering and Technology (ICET) - Cairo, Egypt (2012.10.10-2012.10.11)] 2012 International Conference on Engineering and Technology (ICET) - Simulation of quantum transport in double gate MOSFETs: Coupled-mode space versus real space

✍ El-Banna, Mohammed M.; Sabry, Yasser M.; Fikry, W.; Abdolkader, Tarek M.; Omar, 📂 Article 📅 2012 🏛 IEEE ⚖ 213 KB

[IEEE Electrical Performance of Electron

[IEEE Electrical Performance of Electronic Packaging - Austin, TX (2004.10.27-2004.10.27)] Electrical Performance of Electronic Packaging IWCE-04 - Code for the 3D simulation of nanoscale semiconductor devices, including drift-diffusion and ballistic transport in 1D and 2D subbands, and 3D tunneling

✍ Fiori, ; Iannaccone, 📂 Article 📅 2004 🏛 IEEE 🌐 English ⚖ 119 KB