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Atomistic modeling of chemical vapor deposition: silicon nitride CVD from dichlorosilane and ammonia

✍ Scribed by A.A Bagatur’yants; K.P Novoselov; A.A Safonov; L.L Savchenko; J.V Cole; A.A Korkin

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
367 KB
Volume
3
Category
Article
ISSN
1369-8001

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## Abstract The kinetics of the CVD of boron nitride from trimethoxyborane (TMOB) and ammonia (NH~3~) under atmospheric pressure was investigated by varying the following process parameters: temperature, residence time of the reactants, molar fraction of TMOB, and the NH~3~/TMOB ratio, γ. A kinetic