Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE Y. Taniyasu 1 ) (a), Y. Watanabe (a), D. H. Lim (a), A. W. Jia (a), M. Shimotomai (a), Y. Kato (a), M. Kobayashi (a), A. Yoshikawa (a), and K. Takahashi (b)
Atomic Surface Structure of MOVPE-Grown InP(001)
โ Scribed by P. Vogt; A. M. Frisch; Th. Hannappel; S. Visbeck; F. Willig; Ch. Jung; N. Esser; W. Braun; W. Richter
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 238 KB
- Volume
- 215
- Category
- Article
- ISSN
- 0370-1972
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โฆ Synopsis
In this study soft X-ray photoemission spectroscopy (SXPS) and scanning tunneling microscopy (STM) were used to investigate the microscopic structure of the P-rich so-called (2ร1) reconstruction of InP(001). The samples were homoepitaxially grown in a commercial MOVPE reactor, transferred to ultra high vacuum (UHV), and then transported to separate UHV analysis chambers. Electron diffraction patterns of the samples taken after transfer show a (2ร1)/(2ร2) periodicity with streaks in the [ " 110] direction. STM images display rows along the [110] direction showing a twofold periodicity. Consistent with SXPS spectra of the P2p and In4d core levels the structure can be explained by a fractional monolayer of P-dimers adsorbed on a complete second layer of P. The P-dimers are arranged in local (2ร2)/c(2ร2)/c(4ร2) structures showing a lack of long-range ordering.
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