Angle-dependentXPS Analysis of (NH4)2Sx-treated InP(001) Surfaces
✍ Scribed by Fukuda, Y.; Suzuki, Y.; Sanada, N.; Sasaki, S.
- Publisher
- John Wiley and Sons
- Year
- 1996
- Tongue
- English
- Weight
- 369 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0142-2421
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✦ Synopsis
Angle
-dependent high-resolution XPS spectra of S 2p, In 3d,,, and P 2p have been measured on the InP(001) sample etched chemically, treated with (NH4),Sx at room temperature (RT), exposed to air at RT and annealed at 400°C in a vacuum. Three kinds (%I, S-I1 and S-111) of chemical states of sulphur on the (NH4),Sx-treated InP(001) surface at RT are found. It is suggested that %I. S-I1 and S-111 correspond to sulphur in the bulk, sulphur bridge-bonded to indium on the surface and elemental sulphur, respectively. Chemical state of S-111 is decreased for the treated sample exposed to air at RT for 1 month. It is removed upon annealing the sample at 400°C in a vacuum, while S-I and S-I1 remain on the surface. The thickness of the sulphide layer on the annealed surface is estimated to be about one monolayer. Angle-dependent XPS spectra of S 2p and In 3d,,, are discussed.