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Atomic layer deposition process with TiF_4 as a precursor for depositing metal fluoride thin films

✍ Scribed by Pilvi, Tero ;Ritala, Mikko ;Leskelä, Markku ;Bischoff, Martin ;Kaiser, Ute ;Kaiser, Norbert

Book ID
115354000
Publisher
The Optical Society
Year
2008
Tongue
English
Weight
618 KB
Volume
47
Category
Article
ISSN
1559-128X

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Titanium isopropoxide as a precursor for
Titanium isopropoxide as a precursor for atomic layer deposition: characterization of titanium dioxide growth process
✍ Jaan Aarik; Aleks Aidla; Teet Uustare; Mikko Ritala; Markku Leskelä 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 208 KB

Atomic layer deposition ALD of titanium oxide from titanium isopropoxide Ti OCH CH and water as well as 3 2 4 Ž Ž . . Ž . from Ti OCH CH and hydrogen peroxide H O was studied. According to data of real-time quartz crystal 3 2 4 2 2 Ž . Ž Ž . . microbalance QCM measurements, adsorption of Ti OCH CH w