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Atomic layer deposition of Ru thin film using N2/H2 plasma as a reactant

✍ Scribed by Tae Eun Hong; Ki-Yeung Mun; Sang-Kyung Choi; Ji-Yoon Park; Soo-Hyun Kim; Taehoon Cheon; Woo Kyoung Kim; Byoung-Yong Lim; Sunjung Kim

Book ID
113937737
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
789 KB
Volume
520
Category
Article
ISSN
0040-6090

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## Abstract By using remote plasma atomic layer deposition (ALD), ruthenium thin films were deposited on SiO~2~ using bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)~2~] as a Ru precursor and an ammonia plasma as a reactant. Different plasma treatments were applied, and the best results were obtained