Atomic Layer Deposition for Semiconductors

✍ Scribed by Cheol Seong Hwang, Cha Young Yoo (auth.), Cheol Seong Hwang (eds.)

Publisher: Springer US
Year: 2014
Tongue: English
Leaves: 265
Edition: 1
Category: Library

No coin nor oath required. For personal study only.

✦ Synopsis

This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines. The section on ALD for memories covers both mass-produced memories, such as DRAM and Flash, and emerging memories, such as PCRAM and FeRAM. The section on ALD for logic devices covers both front-end of the line processes and back-end of the line processes. The final section on ALD for machines looks at toolsets and systems hardware. Each chapter provides the history, operating principles, and a full explanation of ALD processes for each device.

✦ Table of Contents

Front Matter....Pages i-x
Front Matter....Pages 1-1
Introduction....Pages 3-12
Front Matter....Pages 13-13
ALD Precursors and Reaction Mechanisms....Pages 15-46
ALD Simulations....Pages 47-69
Front Matter....Pages 71-71
Mass-Production Memories (DRAM and Flash)....Pages 73-122
PCRAM....Pages 123-148
FeRAM....Pages 149-171
Front Matter....Pages 173-173
Front End of the Line Process....Pages 175-208
Back End of the Line....Pages 209-238
Front Matter....Pages 239-239
ALD Machines....Pages 241-255
Erratum to: Atomic Layer Deposition for Semiconductors....Pages E1-E1
Back Matter....Pages 257-263

✦ Subjects

Electrochemistry;Semiconductors;Memory Structures;Energy Technology;Electronics and Microelectronics, Instrumentation

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