✦ LIBER ✦

Atomic layer deposited WNxCy films growth on SiC surfaces

✍ Scribed by A. Martin Hoyas; C.M. Whelan; J. Schuhmacher; K. Maex; J.P. Celis

Book ID: 104051556
Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 138 KB
Volume: 83
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2006.09.010

No coin nor oath required. For personal study only.

✦ Synopsis

The growth of tungsten nitride carbide, WN x C y , films obtained by atomic layer deposition (ALD), using tri-ethylboron, tungsten hexafluoride and ammonia precursors is determined by the density and type of substrate reactive sites. During an initial period, referred to as transient regime, the SiC oxidation state and the tri-ethylboron pulse time determine the amount of metal deposited. WN x C y growth on SiC is similar to that on PECVD SiO 2 explained by decomposition of the tri-ethylboron precursor, giving rise to a carbon rich WN x C y -oxide interface.

📜 SIMILAR VOLUMES

On the initial growth of atomic layer de

On the initial growth of atomic layer deposited TiO2 films on silicon and copper surfaces

✍ Qian Tao; Kirsten Overhage; Gregory Jursich; Christos Takoudis 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 915 KB

Atom deposition on surface clusters: thi

Atom deposition on surface clusters: thin film growth on Pd(111)

✍ Goranka Bilalbegović; Andrew E DePristo 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 986 KB

Growth of manganese oxide thin films by

Growth of manganese oxide thin films by atomic layer deposition

✍ O. Nilsen; H. Fjellvåg; A. Kjekshus 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 657 KB

Growth of the Initial Atomic Layers of T

Growth of the Initial Atomic Layers of Ta-N Films During Atomic Layer Deposition on Silicon-Based Substrates

✍ Steffen Strehle; Daniela Schmidt; Matthias Albert; Johann W. Bartha 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 651 KB

## Abstract The growth of ultra‐thin Ta‐N films using atomic layer deposition (ALD) is investigated by in‐situ X‐ray photoelectron spectroscopy (XPS) starting from the first precursor pulse, as precursor substances __tert__‐butylimido‐tris(diethylamido)tantalum (TBTDET) and __tert__‐butylimido‐bis(

Properties of Al2O3-films deposited on s

Properties of Al2O3-films deposited on silicon by atomic layer epitaxy

✍ Per Ericsson; Stefan Bengtsson; Jarmo Skarp 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 293 KB

A1203-films deposited by atomic layer epitaxy onto silicon wafers were investigated structurally and electrically. A post-deposition anneal at 900°C resulted in a decrease in film thickness of about 10% and an increase in the index of refraction of about 3%. The densification did not significantly i

Effects of initial growth mode on the el

Effects of initial growth mode on the electrical properties of atomic-layer-deposited Hfo2films

✍ Hyo Sik Chang 📂 Article 📅 2009 🏛 The Korean Institute of Metals and Materials 🌐 English ⚖ 211 KB