Atmospheric pressure deposition of F-doped SnO2 thin films from organotin fluoroalkoxide precursors
✍ Scribed by Kieran C Molloy; Joanne E Stanley
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 173 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0268-2605
- DOI
- 10.1002/aoc.1472
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📜 SIMILAR VOLUMES
13 , n = 1) have been synthesized, characterized by 1 H, 13 C, 19 F and 119 Sn NMR, and evaluated as precursors for the atmospheric pressure chemical vapour deposition of fluorine-doped SnO 2 thin films. All precursors were sufficiently volatile in the range 84-136 • C and glass substrate temperatur
## Abstract The monomeric tungsten oxo‐fluoroalkoxide W(O)(CH~2~CF~3~)~4~ (1) was synthesized from W(O)Cl~4~ and CF~3~CH~2~OH in the presence of ammonia. It was used in atmospheric pressure chemical vapour deposition experiments to deposit non‐stoichiometric WO~2.9~ when used as a single‐source pre