13 , n = 1) have been synthesized, characterized by 1 H, 13 C, 19 F and 119 Sn NMR, and evaluated as precursors for the atmospheric pressure chemical vapour deposition of fluorine-doped SnO 2 thin films. All precursors were sufficiently volatile in the range 84-136 β’ C and glass substrate temperatur
β¦ LIBER β¦
Atmospheric pressure chemical vapour deposition of tungsten doped vanadium(iv) oxide from VOCl3, water and WCl6
β Scribed by Manning, Troy D.; Parkin, Ivan P.
- Book ID
- 121734573
- Publisher
- Royal Society of Chemistry
- Year
- 2004
- Tongue
- English
- Weight
- 394 KB
- Volume
- 14
- Category
- Article
- ISSN
- 0959-9428
- DOI
- 10.1039/B403576N
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