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Application of Ti: W barrier metallization for integrated circuits

โœ Scribed by P.B. Ghate; J.C. Blair; C.R. Fuller; G.E. McGuire


Publisher
Elsevier Science
Year
1978
Tongue
English
Weight
639 KB
Volume
53
Category
Article
ISSN
0040-6090

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Al-SI-Cu films deposIted on substrates of SI, borophosphate silicate glass and TiW mth improved electrical properties (lower sheet resistance) and rehatnhty (lugher Al[lll] diffraction mtensity) obtained by the proposed metalbzatlon process are described A chemometrx approach of umfymg the expernnen