Application of plasma etching techniques to metal-oxide-semiconductor (MOS) processing
β Scribed by R.C. Booth; C.J. Heslop
- Book ID
- 107862729
- Publisher
- Elsevier Science
- Year
- 1980
- Tongue
- English
- Weight
- 838 KB
- Volume
- 65
- Category
- Article
- ISSN
- 0040-6090
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π SIMILAR VOLUMES
The applicability of the NLD plasma etching apparatus to the 0.1 m wafer process was verified through the experiments. The uniformity of the SiO etch rate was obtained within 1.6% (3% as 3 value) on 200 mm wafer, by applying a functional current to the magnetic coil with 0.1 Hz. A super-fine trench
The laser-induced photopotential was measured on n-ZnO and n-Ti02 polycrystalbne electrodes with and without a "current doubling reagent" HCOONa. The rise time of the photopotential was 5-10 ns. The origin of the photopotential, the kinetics and the mechanism of the current doubling process are disc