Application of magnetic neutral loop discharge plasma to SiO2 etching process

✍ Scribed by W. Chen; T. Hayashi; M. Itoh; Y. Morikawa; K. Sugita; T. Uchida

• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 206 KB
• Volume: 53
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/s0042-207x(98)00416-3

✦ Synopsis

The applicability of the NLD plasma etching apparatus to the 0.1 m wafer process was verified through the experiments. The uniformity of the SiO etch rate was obtained within 1.6% (3% as 3 value) on 200 mm wafer, by applying a functional current to the magnetic coil with 0.1 Hz. A super-fine trench pattern with 20 nm width and 800 nm depth was also successfully fabricated with an electron beam resist mask in a C F #CH F plasma at 0.3 Pa.